Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells

JIN, R., OKADA, K., KHITROVA, G., GIBBS, H. M., PEREIRA, Mauro, KOCH, S. W. and PEYGHAMBARIAN, N. (1992). Optical nonlinearities in strained-layer InGaAs/GaAs multiple quantum wells. Applied Physics Letters, 61 (15), p. 1745.

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Official URL: http://dx.doi.org/10.1063/1.108414
Link to published version:: https://doi.org/10.1063/1.108414
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    Abstract

    Optical nonlinearities in strained‐layer InGaAs/GaAs multiple quantum wells (MQWs) are studied using pump‐probe spectroscopy. It is found that the carrier density required for absorption saturation in a strained InGaAs/GaAs MQW is about a factor of two lower than that in an unstrained GaAs/AlGaAs MQW with similar structures, while the nonlinear index change per carrier is about the same for both samples. The decrease in the saturation density in the strained MQW is explained by the increase of the top valence‐band curvature caused by the compressive strain in the quantum well.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1063/1.108414
    Page Range: p. 1745
    Depositing User: Helen Garner
    Date Deposited: 19 Nov 2014 11:16
    Last Modified: 18 Mar 2021 19:00
    URI: http://shura.shu.ac.uk/id/eprint/8814

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