Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium

CHOW, W. W., PEREIRA, Mauro and KOCH, S. W. (1992). Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium. Applied Physics Letters, 61 (7), p. 758.

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Official URL: http://dx.doi.org/10.1063/1.107789
Link to published version:: https://doi.org/10.1063/1.107789
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    Abstract

    The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1063/1.107789
    Page Range: p. 758
    Depositing User: Helen Garner
    Date Deposited: 18 Nov 2014 17:29
    Last Modified: 13 Jun 2017 13:23
    URI: http://shura.shu.ac.uk/id/eprint/8813

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