Gain mechanisms and lasing in II-VI compounds

PEREIRA, Mauro and HENNEBERGER, K. (1997). Gain mechanisms and lasing in II-VI compounds. physica status solidi (b), 202 (2), 751-762.

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    In this paper. we present a microscopic theory for the physical mechanisms giving rise to lasing in II-VI semiconductor media. Both photons and carriers are consistently treated within the same fully quantum mechanical footing by means of nonequilibrium Keldysh Green's function techniques. The highly excited medium is described in terms of a strongly Coulomb correlated electron-hole plasma. Numerical results are presented for the emission, absorption and gain characteristics of ZnCdSe-ZnSSe MQWs in good agreement with recent experimental results.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number:<751::AID-PSSB751>3.0.CO;2-O
    Page Range: 751-762
    Depositing User: Helen Garner
    Date Deposited: 18 Nov 2014 16:25
    Last Modified: 18 Mar 2021 19:15

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