Gain mechanisms and lasing in II-VI compounds

PEREIRA, Mauro and HENNEBERGER, K. (1997). Gain mechanisms and lasing in II-VI compounds. physica status solidi (b), 202 (2), 751-762.

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Official URL: http://dx.doi.org/10.1002/1521-3951(199708)202:2<7...
Link to published version:: 10.1002/1521-3951(199708)202:2<751::AID-PSSB751>3.0.CO;2-O

Abstract

In this paper. we present a microscopic theory for the physical mechanisms giving rise to lasing in II-VI semiconductor media. Both photons and carriers are consistently treated within the same fully quantum mechanical footing by means of nonequilibrium Keldysh Green's function techniques. The highly excited medium is described in terms of a strongly Coulomb correlated electron-hole plasma. Numerical results are presented for the emission, absorption and gain characteristics of ZnCdSe-ZnSSe MQWs in good agreement with recent experimental results.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1002/1521-3951(199708)202:2<751::AID-PSSB751>3.0.CO;2-O
Depositing User: Helen Garner
Date Deposited: 18 Nov 2014 16:25
Last Modified: 18 Nov 2014 16:25
URI: http://shura.shu.ac.uk/id/eprint/8805

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