Optical gain characteristics and excitonic nonlinearities in II–VI laser diodes

MICHLER, P., VEHSE, M., GUTOWSKI, J., BEHRINGER, M., HOMMEL, D., PEREIRA, Mauro and HENNEBERGER, K. (1998). Optical gain characteristics and excitonic nonlinearities in II–VI laser diodes. Journal of Crystal Growth, 184-18, 575-579.

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Official URL: http://dx.doi.org/10.1016/S0022-0248(98)80120-6
Link to published version:: 10.1016/S0022-0248(98)80120-6

Abstract

Gain characteristics and lasing of (Zn, Cd)Se/Zn(S, Se)/(Zn, Mg)(S, Se) separate confinement heterostructures are investigated by optical-gain spectroscopy and by high-excitation spectroscopy under quasi-stationary conditions. The optical gain is measured by means of the stripe-length method whereas excitonic bleaching under lasing conditions is analyzed through two-beam photoluminescence excitation (PLE) spectroscopy. At low lattice temperature, we find a rather low threshold density of 15–20 kW/cm2 for both laser structures and the excitonic enhancement is still preserved at the onset of lasing. The red shift of the gain maximum with respect to the low-density PLE exciton peak increases with temperature. The results indicate a considerable influence of Coulomb correlations even at the high densities necessary for stimulated emission and are more adequately explained by a strongly correlated electron-hole plasma model that goes beyond the simple “excitonic lasing” concept.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1016/S0022-0248(98)80120-6
Depositing User: Helen Garner
Date Deposited: 18 Nov 2014 16:06
Last Modified: 18 Nov 2014 16:06
URI: http://shura.shu.ac.uk/id/eprint/8803

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