Intersubband gain without global inversion through dilute nitride band engineering

PEREIRA, Mauro and TOMIĆ, Stanko (2011). Intersubband gain without global inversion through dilute nitride band engineering. Applied Physics Letters, 98 (6), 061101.

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Official URL: http://dx.doi.org/10.1063/1.3552204
Link to published version:: https://doi.org/10.1063/1.3552204

Abstract

We investigate the possibility of interconduction band gain without global inversion by engineering the conduction bandeffective masses so that the upper lasing subband has an effective mass considerably smaller than the lower lasing subband that could not be obtained in conventional III-V materials. We recover the expected dispersive gain shape for similar masses and contrasting results if the effective masses characterizing the relevant subbands are very different.

Item Type: Article
Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Identification Number: https://doi.org/10.1063/1.3552204
Page Range: 061101
Depositing User: Helen Garner
Date Deposited: 31 Oct 2014 14:44
Last Modified: 18 Mar 2021 19:15
URI: https://shura.shu.ac.uk/id/eprint/8647

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