Intersubband gain without global inversion through dilute nitride band engineering

PEREIRA, Mauro and TOMIĆ, Stanko (2011). Intersubband gain without global inversion through dilute nitride band engineering. Applied Physics Letters, 98 (6), 061101.

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Official URL: http://dx.doi.org/10.1063/1.3552204
Link to published version:: https://doi.org/10.1063/1.3552204
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    Abstract

    We investigate the possibility of interconduction band gain without global inversion by engineering the conduction bandeffective masses so that the upper lasing subband has an effective mass considerably smaller than the lower lasing subband that could not be obtained in conventional III-V materials. We recover the expected dispersive gain shape for similar masses and contrasting results if the effective masses characterizing the relevant subbands are very different.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1063/1.3552204
    Page Range: 061101
    Depositing User: Helen Garner
    Date Deposited: 31 Oct 2014 14:44
    Last Modified: 13 Jun 2017 13:21
    URI: http://shura.shu.ac.uk/id/eprint/8647

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