The relevance of dephasing in THz valence band polariton dispersion relations

FARAGAI, I. A. and PEREIRA, Mauro (2014). The relevance of dephasing in THz valence band polariton dispersion relations. Optical and Quantum Electronics, 47 (4), 937-943.

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Official URL: http://dx.doi.org/10.1007/s11082-014-9982-3
Link to published version:: 10.1007/s11082-014-9982-3

Abstract

THz polaritons have strong potential for device applications and are a challenging field of fundamental studies. In this paper, we use a simplified mathematical model based on a nonlinear dielectric constant approach to the optical susceptibility to describe the coupling of TE-polarized THz radiation with an intervalence band transition in GaAs/Al0.3Ga0.7As multiple quantum wells embedded inmicrocavities. The energy dispersions relations leading to THz polaritons are investigated. Here we focus on the interplay of cavity length and size of the active region against the dephasing mechanisms on polariton dispersion relations.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1007/s11082-014-9982-3
Depositing User: Helen Garner
Date Deposited: 31 Oct 2014 14:03
Last Modified: 06 May 2015 09:11
URI: http://shura.shu.ac.uk/id/eprint/8642

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