Simulations of mid infrared emission of InAsN semiconductors

ORIAKU, C. I. and PEREIRA, Mauro (2014). Simulations of mid infrared emission of InAsN semiconductors. Optical and Quantum Electronics, 47 (4), 829-834.

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Official URL: http://dx.doi.org/10.1007/s11082-014-0002-4
Link to published version:: https://doi.org/10.1007/s11082-014-0002-4
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    Abstract

    This paper delivers an approximation to the complex many body problem of luminescence in semiconductors to the case of mid infrared luminescence of dilute nitrides. The results are compared with recent experimental data for InAsN semiconductors.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1007/s11082-014-0002-4
    Page Range: 829-834
    Depositing User: Helen Garner
    Date Deposited: 31 Oct 2014 14:00
    Last Modified: 13 Jun 2017 13:21
    URI: http://shura.shu.ac.uk/id/eprint/8641

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