Characterization of BaTiO3 thin films deposited by RF magnetron sputtering for use in a.c. TFEL devices

CRAVEN, M. R., CRANTON, W. M., TOAL, S. and REEHAL, H. S. (1998). Characterization of BaTiO3 thin films deposited by RF magnetron sputtering for use in a.c. TFEL devices. Semiconductor Science and Technology, 13 (4), 404-409.

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Official URL: http://iopscience.iop.org/article/10.1088/0268-124...
Link to published version:: https://doi.org/10.1049/ic:19950974
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    Abstract

    Thin films of have been deposited by RF magnetron sputtering onto 100 mm diameter n-type single-crystal Si wafers. Full deposition and post-deposition variables have been investigated with respect to their effect on the dielectric constant and refractive index of the thin films. Specifically for use as insulators for thin film electroluminescent (TFEL) devices, the films need to exhibit a high dielectric constant and a low refractive index. The optimum fabrication route was determined to be deposition at C in a 30% in Ar atmosphere at 7 mTorr with a post-deposition anneal at C for 1 h. Demonstrated here is that films exhibiting suitable characteristics, namely, and n = 2.1, for use in TFEL devices can be fabricated using RF magnetron sputter deposition.

    Item Type: Article
    Additional Information: Cited By (since 1996):9 ID=202
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1049/ic:19950974
    Page Range: 404-409
    Depositing User: Wayne Cranton
    Date Deposited: 15 Feb 2016 15:55
    Last Modified: 18 Mar 2021 23:00
    URI: http://shura.shu.ac.uk/id/eprint/8009

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