CRANTON, W. M., KEY, P. H., SANDS, D., THOMAS, C. B. and WAGNER, F. X. (1996). XeCl laser ablation of thin film ZnS. Applied Surface Science, 96-98, 501-504.Full text not available from this repository.
XeCl laser ablation of films of ZnS, with 200-600 MI thickness, on Si substrates has been studied at laser fluences lower than that required to damage the substrate material. The ZnS film ablation rate (depth of material removed per pulse) is observed to decrease with residual film thickness and increase with laser fluence. The fluence threshold for the onset of ablation is shown to depend inversely on the initial film thickness. This behaviour is explained in terms of a thermal removal mechanism in which the thermal properties of the substrate play a vital role in regulating the film ablation characteristics.
|Additional Information:||Cited By (since 1996):8 ID=204|
|Research Institute, Centre or Group:||Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group|
|Depositing User:||Wayne Cranton|
|Date Deposited:||08 Feb 2016 11:00|
|Last Modified:||08 Feb 2016 11:00|
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