ELSHERIF, Osama S., VERNON-PARRY, Karen, EVANS-FREEMAN, Jan H. and MAY, Paul W. (2012). Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films. Materials Science Forum, 717-20, 1315-1318.Full text not available from this repository.
Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) have been applied to B-doped thin polycrystalline diamond films deposited on p+-silicon by hot filament chemical vapour deposition. Films with two boron concentrations (1.5×10^19 cm-3 and 4×10^19 cm-3) were selected to study the effect of B concentration on the electronic states in CVD-diamond. We have investigated whether these deep states arise from point or extended defects. DLTS and AS find two hole traps, E1 (0.29±0.03 eV) and E2 (0.53±0.07 eV), in both films. A third level, E3 (0.36±0.02 eV) was also detected in the more highly doped film. The defect levels E1 and E2 exhibited behaviour typical of extended defects, which we suggest may be due to B segregated to the grain boundaries. In contrast, the defect level E3 exhibited behaviour characteristic of an isolated point defect, which we attribute to B-related centres in bulk diamond.
|Research Institute, Centre or Group:||Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group|
|Depositing User:||Helen Garner|
|Date Deposited:||21 Sep 2012 13:26|
|Last Modified:||21 Sep 2012 13:26|
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