Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films

ELSHERIF, Osama S., VERNON-PARRY, Karen, EVANS-FREEMAN, Jan H. and MAY, Paul W. (2012). Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films. Materials Science Forum, 717-20, 1315-1318.

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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.7...
Link to published version:: https://doi.org/10.4028/www.scientific.net/MSF.717-720.1315


Admittance spectroscopy (AS) and deep level transient spectroscopy (DLTS) have been applied to B-doped thin polycrystalline diamond films deposited on p+-silicon by hot filament chemical vapour deposition. Films with two boron concentrations (1.5×10^19 cm-3 and 4×10^19 cm-3) were selected to study the effect of B concentration on the electronic states in CVD-diamond. We have investigated whether these deep states arise from point or extended defects. DLTS and AS find two hole traps, E1 (0.29±0.03 eV) and E2 (0.53±0.07 eV), in both films. A third level, E3 (0.36±0.02 eV) was also detected in the more highly doped film. The defect levels E1 and E2 exhibited behaviour typical of extended defects, which we suggest may be due to B segregated to the grain boundaries. In contrast, the defect level E3 exhibited behaviour characteristic of an isolated point defect, which we attribute to B-related centres in bulk diamond.

Item Type: Article
Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Identification Number: https://doi.org/10.4028/www.scientific.net/MSF.717-720.1315
Page Range: 1315-1318
Depositing User: Helen Garner
Date Deposited: 21 Sep 2012 13:26
Last Modified: 18 Mar 2021 20:01
URI: https://shura.shu.ac.uk/id/eprint/6164

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