Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements

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ELSHERIF, O.S., VERNON-PARRY, Karen, DHARMADASA, I, EVANS-FREEMAN, J.H., AIREY, R.J., KAPPERS, M.J. and HUMPHREYS, C.J. (2012). Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films, 520 (7), 3064-3070.

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Official URL: http://dx.doi.org/10.1016/j.tsf.2011.11.020
Link to published version:: 10.1016/j.tsf.2011.11.020
Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1016/j.tsf.2011.11.020
Depositing User: Jill Hazard
Date Deposited: 24 Aug 2012 10:46
Last Modified: 24 Aug 2012 10:46
URI: http://shura.shu.ac.uk/id/eprint/5698

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