EELS and STEM analysis of metal nitride/substrate interfaces

ROSS, I M, ZHOU, Z, RAINFORTH, W M, BLELOCH, A, EHIASARIAN, Arutiun and HOVSEPIAN, Papken (2010). EELS and STEM analysis of metal nitride/substrate interfaces. Journal of Physics: Conference Series, 241, 012102.

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Link to published version:: 10.1088/1742-6596/241/1/012102

Abstract

Nitride based protective coatings produced by physical vapour deposition offer a promising means to extend the oxidation and wear performance of γ-TiAl. Metal ion pre-etching of the substrate surface has been shown to significantly enhance the adhesion between the coating and substrate. In this study we have applied spectroscopic imaging and advanced STEM analysis to study such interfaces. For a conventional Cr cathodic arc discharge Cr ion implantation of ~6nm into the substrate was observed. For an etch using high power impulse magnetron sputtering the metal ion implantation depth was reduced to ~2-3nm. In both cases a corresponding depletion zone of Ti and Al was observed. In addition, nitrogen diffusion into the substrate during coating deposition was also revealed to a similar depth respectively.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Nanotechnology Centre for PVD Research
Identification Number: 10.1088/1742-6596/241/1/012102
Depositing User: Helen Garner
Date Deposited: 05 Jan 2012 16:47
Last Modified: 05 Jan 2012 16:47
URI: http://shura.shu.ac.uk/id/eprint/4259

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