Mechanism of enhanced energy storage density in AgNbO3-based lead-free antiferroelectrics

LU, Zhilun, BAO, Weichao, WANG, Ge, SUN, Shi-Kuan, LI, Linhao, LI, Jinglei, YANG, Huijing, JI, Hongfen, FETEIRA, Antonio, LI, Dejun, XU, Fangfang, KLEPPE, Annette K, WANG, Dawei, LIU, Shi-Yu and REANEY, Ian M (2021). Mechanism of enhanced energy storage density in AgNbO3-based lead-free antiferroelectrics. Nano Energy, 79, p. 105423.

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Official URL: https://www.sciencedirect.com/science/article/pii/...
Open Access URL: https://www.sciencedirect.com/science/article/pii/... (Published version)
Link to published version:: https://doi.org/10.1016/j.nanoen.2020.105423
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    Abstract

    The mechanisms underpinning high energy storage density in lead-free Ag1–3xNdxTayNb1-yO3 antiferroelectric (AFE) ceramics have been investigated. Rietveld refinements of in-situ synchrotron X-ray data reveal that the structure remains quadrupled and orthorhombic under electric field (E) but adopts a non-centrosymmetric space group, Pmc21, in which the cations exhibit a ferrielectric configuration. Nd and Ta doping both stabilize the AFE structure, thereby increasing the AFE-ferrielectric switching field from 150 to 350 kV cm−1. Domain size and correlation length of AFE/ferrielectric coupling reduce with Nd doping, leading to slimmer hysteresis loops. The maximum polarization (Pmax) is optimized through A-site aliovalent doping which also decreases electrical conductivity, permitting the application of a larger E. These effects combine to enhance energy storage density to give Wrec = 6.5 J cm−3 for Ag0.97Nd0.01Ta0.20Nb0.80O3.

    Item Type: Article
    Uncontrolled Keywords: 0303 Macromolecular and Materials Chemistry; 0912 Materials Engineering; 1007 Nanotechnology
    Identification Number: https://doi.org/10.1016/j.nanoen.2020.105423
    Page Range: p. 105423
    SWORD Depositor: Symplectic Elements
    Depositing User: Symplectic Elements
    Date Deposited: 21 Oct 2020 13:30
    Last Modified: 21 Oct 2020 13:30
    URI: http://shura.shu.ac.uk/id/eprint/27483

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