Optimization of in situ substrate surface treatment in a cathodic arc plasma: A study by TEM and plasma diagnostics

SCHONJAHN, C., EHIASARIAN, Arutiun, LEWIS, D. B., NEW, R., MUNZ, W. D., TWESTEN, R. D. and PETROV, I. (2001). Optimization of in situ substrate surface treatment in a cathodic arc plasma: A study by TEM and plasma diagnostics. Journal of Vacuum Science & Technology A, 19 (4), 1415-1420.

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Link to published version:: 10.1116/1.1349726

Abstract

Cr ions generated by a steered cathodic arc discharge are utilized to control and enhance the adhesion properties of 3.5 mum thick TixAl(1-x)N based coatings deposited on high speed steel substrates, A two-step etching procedure (negative substrate bias, U-S=1200 V) is suggested, operating the arc discharge initially in an Ar atmosphere (p(Ar)=0.09 Pa.. 6.75x10(-4) Torr) to achieve predominantly metal removing effects (etching rate: 9 nm min(-1)) with a mixture of Ar and Cr ions. In the second stage at residual gas pressure level (p(Ar) less than or equal to 0.006 Pa, 4.5x10(-5) Torr, etching rate: 4 nm min(-1)) pure Cr ion irradiation leads to a Cr penetration as deep as 20 nm with a Cr accumulation of approximately 37 at % at the interface substrate/coating. This procedure promotes localized epitaxial growth of TixAl(1-x)N and enhances critical load values up to 85 +/-5 N. (C) 2001 American Vacuum Society.

Item Type: Article
Additional Information: 47th International Symposium of AVS, OCT 02-06, 2000 BOSTON, MASSACHUSETTS
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Nanotechnology Centre for PVD Research
Identification Number: 10.1116/1.1349726
Depositing User: Ann Betterton
Date Deposited: 19 May 2010 17:28
Last Modified: 14 Sep 2011 15:41
URI: http://shura.shu.ac.uk/id/eprint/2083

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