HASHIM, A. A., BARRATT, D. S., RAY, A. K. and HASSAN, A. K. (2004). Formation of an interface layer in thermionic oxide cathodes for CRT applications. Journal of physics d-applied physics, 37 (20), 2932-2937.
Full text not available from this repository.Abstract
Scanning electron microscopic techniques were employed to study the surface morphological changes of oxide cathodes and nickel caps as a result of cathode activation extending over periods of 1-12 h. Elemental analysis of barium, strontium, tungsten, magnesium and aluminium was performed using energy dispersion x-ray spectroscopy. An abrupt change was observed after activation longer than 3 h. Conduction through well activated cathode assemblies was found to be due to intergranular electron tunnelling at low temperatures (T less than or equal to 500 K), while trapping and detrapping at grain boundaries becomes the dominant mechanism at high temperatures (T greater than or equal to 500 K). The contribution of the interfacial layer to conductivity was found to be significant for cathodes activated for smaller periods.
| Item Type: | Article |
|---|---|
| Research Institute, Centre or Group: | Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group |
| Identification Number: | 10.1088/0022-3727/37/20/023 |
| Depositing User: | Helen Garner |
| Date Deposited: | 19 May 2010 16:06 |
| Last Modified: | 23 Sep 2010 12:20 |
| URI: | http://shura.shu.ac.uk/id/eprint/1984 |
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