Microstructural and electrical studies on diamond films

CHAURE, S., CHAURE, N. B., HASSAN, A. K., RAY, A. K., REEHAL, H. S., GHERMAZION, A. and CAPAN, R. (2005). Microstructural and electrical studies on diamond films. Vacuum, 77 (3), 231-235.

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Link to published version:: 10.1016/j.vacuum.2004.09.023

Abstract

X-ray diffraction, atomic force microscopy and electrical studies were performed on 2-3 mu m thick diamond films on silicon substrates. The films were produced by the microwave plasma chemical vapour deposition method. The films were polycrystalline having a grain size of 32.1 nm. From room temperature current-voltage measurements, it was found that the charge transport mechanism was due to the thermionic emission over the potential barrier of 1.3 eV. (c) 2004 Elsevier Ltd. All rights reserved.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1016/j.vacuum.2004.09.023
Depositing User: Helen Garner
Date Deposited: 20 May 2010 14:21
Last Modified: 03 Jun 2010 15:07
URI: http://shura.shu.ac.uk/id/eprint/1979

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