High Resolution Deep Level Transient Spectroscopy of p-n diodes formed from p-type polycrystalline diamond on n-type silicon

VERNON-PARRY, K. D., EVANS-FREEMAN, J. H., MITROMARA, N. and MAY, P. W. (2008). High Resolution Deep Level Transient Spectroscopy of p-n diodes formed from p-type polycrystalline diamond on n-type silicon. In: Conference on Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, Jul 28-Sep 01, 2008.

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Official URL: http://dx.doi.org/10.1109/COMMAD.2008.4802081
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    High resolution Laplace Deep Level Transient Spectroscopy (LDLTS) at temperatures up to 450K has been applied to thin polycrystalline semiconducting diamond films deposited on n-type silicon. Such structures form p-n diodes and can be characterised by capacitance DLTS. The boron doped diamond films were grown by hot filament chemical vapour deposition and the diamond film thickness was 3-4 microns. The boron concentration in the diamond films ranged from 7x10(18) cm(-3) to 1x10(19) cm(-3). In the LDLTS an isothermal measurement of thousands of capacitance transients was made and then averaged, and the result was inverse transformed to find the trap emission rate. The temperature was chosen as the maximum of the conventional DLTS emission peak. Conventional DLTS showed a combination of majority and minority carrier emission from deep levels. Multiple peaks in the LDLTS spectra suggest that some of the defects are located in a strain field. Capture cross section measurements also show that these peaks exhibit a time dependent capture cross section, which is indicative of carriers being trapped at a large electrically active defect. It is shown in the paper that a combination of LDLTS and direct capture cross section measurements can be applied to semiconducting diamond and can be used to understand whether defects possess single or multiple energy levels, and whether the trapping is at an isolated point defect or in defects in the strain field of an extended defect.

    Item Type: Conference or Workshop Item (Paper)
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Depositing User: Ann Betterton
    Date Deposited: 30 Apr 2010 14:58
    Last Modified: 18 Mar 2021 08:31
    URI: http://shura.shu.ac.uk/id/eprint/1748

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