The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells

VERNON-PARRY, K. D., EVANS-FREEMAN, J. H. and DAWSON, P. (2008). The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells. Materials Science and Engineering B, 146 (1-3), 231-235.

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Abstract

We have investigated the photoluminescence (PL) decay from Er implanted, or grown, into strained SiGe/Si multiple quantum well (MQW) structures grown by molecular beam epitaxy, and compared it with that of Er implanted into crystalline Si. The Er concentration in all MQW structures was of the order of 4 x 10(18) cm(-3). Prior to the erbium implant, PL originating from confined states in the strained MQWs confirmed that this was an optically active MQW sample. The implanted MQW sample was re-grown at 550 degrees C for 5 h and X-ray diffraction measurements after re-growth showed that a high degree of strain had been retained. The Er emission at 1.54 mu m was more intense from all MQW structures than from the implanted Si, but the PL decay time was not significantly different, suggesting that the excitation efficiency is improved when Er is in a quantum well structure and close to a long lived hole population, but the recombination efficiency is largely unaffected. When the excitation laser power density was increased by 10 times, the PL decay from the Er in the MQW structures was largely unaffected, but the PL decay time from Er in Si reduced; this is discussed in terms of non-radiative competition at end-of-range damage. It is proposed that the presence of a long-lived hole population increases the potential for efficient excitation of Er in the MQW structures. (C) 2007 Elsevier B.V. All rights reserved.

Item Type:	Article
Additional Information:	Meeting of the European-Materials-Research-Society MAY 28-JUN 01, 2007, Strasbourg, FRANCE
Research Institute, Centre or Group - Does NOT include content added after October 2018:	Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Identification Number:	https://doi.org/10.1016/j.mseb.2007.07.012
Page Range:	231-235
Depositing User:	Ann Betterton
Date Deposited:	29 Apr 2010 16:05
Last Modified:	18 Mar 2021 09:45
URI:	https://shura.shu.ac.uk/id/eprint/1747

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