LEACH, C. and VERNON-PARRY, K. D. (2006). The effect of sintering temperature on the development of grain boundary traps in zinc oxide based varistors. Journal of Materials Science, 41 (12), 3815-3819.Full text not available from this repository.
A series of zinc oxide based varistors containing 0.5 wt% Bi2O3 and 0.5 wt% Mn2O3 was prepared by a conventional mixed oxide route and sintered at temperatures between 950 degrees and 1300 degrees C. All samples showed varistor behaviour, although as the sintering temperature was increased from 950 degrees C to 1300 degrees C, the non-linearity coefficient, alpha, decreased from 22 to 3. Deep level transient spectroscopy of the varistors showed that the main active electron trap migrated to shallower levels within the bandgap as the sintering temperature increased. At the lowest sintering temperature, where alpha attained the highest values, a second, shallower trap was also activated. (c) 2006 Springer Science + Business Media, Inc.
|Research Institute, Centre or Group:||Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group|
|Depositing User:||Ann Betterton|
|Date Deposited:||29 Apr 2010 17:07|
|Last Modified:||05 May 2010 17:13|
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