Valence intersubband gain without population inversion

PEREIRA, M. F. (2010). Valence intersubband gain without population inversion. CENTRAL EUROPEAN JOURNAL OF PHYSICS, 8 (1), 61-64.

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    Abstract

    Terahertz gain without population inversion is studied in thin III-V semiconductor quantum wells. Nonequilibrium hole populations leading to intervalence gain in the transverse electric mode are investigated. The results are obtained with a Keldysh Nonequilibrium Green's Functions approach that takes into account bandstructure, manybody and nonequilibrium effects.

    Item Type: Article
    Additional Information: Times Cited: 0 International Conference on Semiconductor Materials and Optics OCT 09-10, 2008 Warsaw, POLAND
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Page Range: 61-64
    Depositing User: Danny Weston
    Date Deposited: 15 Apr 2010 11:30
    Last Modified: 10 Oct 2018 13:29
    URI: http://shura.shu.ac.uk/id/eprint/1698

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