Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors

ORIAKU, Chijioke I., SPENCER, Timothy, YANG, X., ZUBELLI, J.P. and PEREIRA, Mauro (2017). Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors. Journal of Nanophotonics, 11 (2), 026005.

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Official URL: http://nanophotonics.spiedigitallibrary.org/articl...
Link to published version:: https://doi.org/10.1117/1.JNP.11.026005
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    Abstract

    In this paper, we calculate the luminescence of the dilute quaternary InAs(N,Sb). The incorporation of N leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves the N incorporation and further reduces the bandgap. This is thus extremely relevant for devices operating in the mid-infrared (MIR) spectral range from 3 to 5 μm. In order to describe this system, the theory starts with the band anticrossing model applied to both conduction and the valence band to generate inputs for analytical approximations that lead to luminescence spectra, including plasma screening, bandgap renormalization and excitonic enhancements. Direct application of the equations leads to good agreement with some recent experimental data.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1117/1.JNP.11.026005
    Page Range: 026005
    Depositing User: Jill Hazard
    Date Deposited: 30 Mar 2017 12:57
    Last Modified: 23 Jul 2018 17:28
    URI: http://shura.shu.ac.uk/id/eprint/15416

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