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ORIAKU, Chijioke I., SPENCER, Timothy, YANG, X., ZUBELLI, J.P. and PEREIRA, Mauro (2017). Analytical expressions for the luminescence of dilute quaternary InAs(N,Sb) semiconductors. Journal of Nanophotonics, 11 (2), 026005.
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Spencer and Pereira - Analytical expressions for the luminescence of dilute (AM).pdf - Accepted Version All rights reserved. Download (252kB) | Preview |
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Abstract
In this paper, we calculate the luminescence of the dilute quaternary InAs(N,Sb). The incorporation of N leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves the N incorporation and further reduces the bandgap. This is thus extremely relevant for devices operating in the mid-infrared (MIR) spectral range from 3 to 5 μm. In order to describe this system, the theory starts with the band anticrossing model applied to both conduction and the valence band to generate inputs for analytical approximations that lead to luminescence spectra, including plasma screening, bandgap renormalization and excitonic enhancements. Direct application of the equations leads to good agreement with some recent experimental data.
| Item Type: | Article |
|---|---|
| Research Institute, Centre or Group - Does NOT include content added after October 2018: | Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group |
| Identification Number: | https://doi.org/10.1117/1.JNP.11.026005 |
| Page Range: | 026005 |
| Depositing User: | Jill Hazard |
| Date Deposited: | 30 Mar 2017 12:57 |
| Last Modified: | 18 Mar 2021 11:34 |
| URI: | https://shura.shu.ac.uk/id/eprint/15416 |
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