Study of the Effect of RF-power and Process Pressure on the Morphology of Copper and Titanium Sputtered by ICIS

LOCH, Daniel and EHIASARIAN, Arutiun (2016). Study of the Effect of RF-power and Process Pressure on the Morphology of Copper and Titanium Sputtered by ICIS. Surface and coatings technology. (Submitted)

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Abstract

Inductively Coupled Impulse Sputtering is a promising new technique for highly ionised sputter deposition of materials. It combines pulsed RF-power ICP technology to generate plasma with pulsed high voltage DC bias on the cathode to eliminate the need for a magnetron. To understand the effect of power and pressure on the coating morphology, Copper and Titanium films have been deposited in a power-pressure matrix. The RF-power was increased from 2000 - 4000 W. The pressure was set to 6 Pa and 13 Pa respectively. For Copper, the morphology changes from columnar to fully dense with increasing power and the deposition rate drops from 360 nmh-1 to 210 nmh-1 with higher process pressure. Titanium morphology does not change with power or pressure. The deposition rate is lower than predicted by the differences in sputtering yields at 68 nmh-1 for a pressure of 6 Pa.

Item Type: Article
Uncontrolled Keywords: ICIS, HIPIMS, IPVD, Pulsed Plasma, Magnetron Free Sputtering
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Nanotechnology Centre for PVD Research
Depositing User: Daniel Loch
Date Deposited: 06 Oct 2016 13:06
Last Modified: 19 Oct 2016 23:50
URI: http://shura.shu.ac.uk/id/eprint/13738

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