Ballistic electron emission microscopy of Au/n-ZnSe contacts and local density of states spectroscopy

CHAHBOUN, A., CORATGER, R., AJUSTRON, F., BEAUVILLAIN, J., DHARMADASA, I. M. and SAMANTILLEKE, A. P. (2000). Ballistic electron emission microscopy of Au/n-ZnSe contacts and local density of states spectroscopy. Journal of Applied Physics, 87 (5), 2422-2426.

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Link to published version:: 10.1063/1.372195

Abstract

Ballistic electron emission microscopy (BEEM) has been used to investigate the Au/n-ZnSe contact at high voltage. A statistical barrier height value of 1.63 +/- 0.05 eV is obtained. The metal-insulator-semiconductor structure is invoked to explain domains of low electron transmission. Features appear in BEEM spectra at higher voltages and can be attributed to the density of empty states in the semiconductor. Impact ionization effects are observed when the electron kinetic energy exceeds the band-gap energy. (C) 2000 American Institute of Physics. [S0021-8979(00)02104-6].

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1063/1.372195
Depositing User: Ann Betterton
Date Deposited: 25 Mar 2010 12:01
Last Modified: 25 Mar 2010 12:01
URI: http://shura.shu.ac.uk/id/eprint/1327

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