Optimisation of CdTe electrodeposition voltage for development of CdS/CdTe solar cells

DISO, D. G., FAUZI, F., ECHENDU, O. K., OLUSOLA, O.I. and DHARMADASA, I (2016). Optimisation of CdTe electrodeposition voltage for development of CdS/CdTe solar cells. Journal of Materials Science: Materials in Electronics. (In Press)

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Official URL: http://link.springer.com/article/10.1007/s10854-01...
Link to published version:: 10.1007/s10854-016-4844-3


Cadmium telluride (CdTe) thin films have been deposited on glass/conducting glass (FTO) substrates using low-cost two electrode system and aqueous electrodeposition method. The glass/FTO substrates were used to grow the CdTe layers at different deposition voltages. The structural, electrical, optical and morphological properties of the resulting films have been characterized using X-ray diffraction (XRD), Photoelectrochemical (PEC) cell measurements, optical absorption spectroscopy and Scanning Electron Microscopy (SEM). The XRD results indicate that at voltages less than or higher than 1.576 V, crystallinity is poor due to presence of two phases. When CdTe is grown at 1.576 V, the composition is stoichiometric, and the (111) peak has the highest intensity in the XRD diffractogram indicating a high degree of crystallinity. SEM studies showed that all layers had pin-holes and gaps between the grains. These openings seem to be more common in the samples grown at voltages away from the stoichiometric voltage (1.576 V). The linear I–V curves of glass/FTO/CdS/CdTe/Au structures fabricated using stoichiometric CdTe showed efficiency of 10.1 % under AM 1.5 illumination

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre
Identification Number: 10.1007/s10854-016-4844-3
Depositing User: Carmel House
Date Deposited: 22 Aug 2016 10:19
Last Modified: 19 Oct 2016 23:47
URI: http://shura.shu.ac.uk/id/eprint/13266

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