Band anticrossing and luminescence emission in dilute InAs1−x−yNxSby quaternary alloys

ORIAKU, Chijioke I. and PEREIRA, Mauro (2015). Band anticrossing and luminescence emission in dilute InAs1−x−yNxSby quaternary alloys. In: JAWORSKI, Marek and MARCINIAK, Marian, (eds.) 2015 17th International Conference on Transparent Optical Networks (ICTON). IEEE, 1-2.

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Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?...
Link to published version:: 10.1109/ICTON.2015.7193677

Abstract

In this paper, we calculate the luminescence of the dilute quaternary InAs1-x-yNxSby semiconductor using a microscopic approach. The theory starts with the band anticrossing model applied to both conduction and the valence band to generate input for analytical approximations that lead to luminescence spectra, including relevant many body effects. Direct application of the equations leads to good agreement with recently measured experimental data.

Item Type: Book Section
Additional Information: ISSN for series - 2162-7339 Article number - We.P.32 INSPEC Accession Number: 15366260 Presented at 17th ICTON 2015, 5-9 July 2015, Budapest, Hungary.
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1109/ICTON.2015.7193677
Depositing User: Margaret Boot
Date Deposited: 05 Oct 2016 10:57
Last Modified: 05 Oct 2016 10:57
URI: http://shura.shu.ac.uk/id/eprint/12951

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