Study of annealing effects of cuprous oxide grown by electrodeposition technique

SIRIPALA, W., PERERA, L. D. R. D., DESILVA, K. T. L., JAYANETTI, J. K. D. S. and DHARMADASA, I. M. (1996). Study of annealing effects of cuprous oxide grown by electrodeposition technique. Solar Energy Materials and Solar Cells, 44 (3), 251-260.

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Link to published version:: 10.1016/0927-0248(96)00043-8

Abstract

Low temperature electrochemical deposition of cuprous oxide from aqueous solutions has been investigated. X-ray diffraction, scanning electron microscopy, optical absorption, and photo-response of liquid/cuprous oxide junctions have been used to study the deposits' crystallographic, morphological, optical, and electrical properties. Effects of annealing in air have been studied using the above mentioned methods. As-deposited cuprous oxide exhibits a direct band gap of 2.0 eV, and shows an n-type behaviour when used in an liquid/solid junction. Annealing below 300 degrees C enhances the n-type photocurrent produced by the junction. Type conversion occurs after heat treatments in air at temperatures above 300 degrees C. No apparent bulk structure changes have been observed during annealing below this temperature, but heat treatments above this temperature produce darker films containing cupric oxide and its complexes with water.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1016/0927-0248(96)00043-8
Depositing User: Ann Betterton
Date Deposited: 08 Mar 2010 17:26
Last Modified: 04 Jun 2010 12:04
URI: http://shura.shu.ac.uk/id/eprint/1284

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