SAMANTILLEKE, A. P., BOYLE, M. H., YOUNG, J. and DHARMADASA, I (1998). Electrodeposition of n-type and p-type ZnSe thin films for applications in large area optoelectronic devices. Journal of Materials Science: Materials in Electronics, 9 (4), 289-290.Full text not available from this repository.
ZnSe layers have been grown by a low temperature (similar to 65 degrees C) electrochemical deposition technique in an aqueous medium. The resulting thin films have been characterized using X-ray diffraction (XRD) and a photoelectrochemical (PEC) cell for determination of the bulk properties and electrical conductivity type. XRD patterns indicate the growth of ZnSe layers with (1 1 1) as the preferred orientation. PEC studies show p-type semiconducting properties for the as deposited layers and n-type ZnSe can be produced by appropriate doping. Annealing at 250 degrees C for 15 min improves the crystallinity of the layers and the photo response of the ZnSe/electrolyte junction. (C) 1998 Kluwer Academic Publishers.
|Research Institute, Centre or Group:||Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group|
|Depositing User:||Ann Betterton|
|Date Deposited:||08 Mar 2010 16:06|
|Last Modified:||11 Jan 2017 10:33|
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