Electrodeposition of n-type and p-type ZnSe thin films for applications in large area optoelectronic devices

SAMANTILLEKE, A. P., BOYLE, M. H., YOUNG, J. and DHARMADASA, I. M. (1998). Electrodeposition of n-type and p-type ZnSe thin films for applications in large area optoelectronic devices. Journal of Materials Science: Materials in Electronics, 9 (4), 289-290.

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Link to published version:: 10.1023/A:1008876722944

Abstract

ZnSe layers have been grown by a low temperature (similar to 65 degrees C) electrochemical deposition technique in an aqueous medium. The resulting thin films have been characterized using X-ray diffraction (XRD) and a photoelectrochemical (PEC) cell for determination of the bulk properties and electrical conductivity type. XRD patterns indicate the growth of ZnSe layers with (1 1 1) as the preferred orientation. PEC studies show p-type semiconducting properties for the as deposited layers and n-type ZnSe can be produced by appropriate doping. Annealing at 250 degrees C for 15 min improves the crystallinity of the layers and the photo response of the ZnSe/electrolyte junction. (C) 1998 Kluwer Academic Publishers.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1023/A:1008876722944
Depositing User: Ann Betterton
Date Deposited: 08 Mar 2010 16:06
Last Modified: 24 Sep 2010 14:51
URI: http://shura.shu.ac.uk/id/eprint/1281

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