Graded-Bandgap solar cells using all-electrodeposited ZnS, CdS and CdTe thin-films

ECHENDU, Obi and DHARMADASA, I (2015). Graded-Bandgap solar cells using all-electrodeposited ZnS, CdS and CdTe thin-films. Energies, 8 (5), 4416-4435.

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Official URL: http://www.mdpi.com/1996-1073/8/5/4416/htm
Link to published version:: https://doi.org/10.3390/en8054416
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    Abstract

    A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding improvement in all the solar cell parameters resulting to a conversion efficiency >10% under AM1.5 illumination conditions at room temperature, compared to a 2-layer glass/FTO/CdS/CdTe/Au reference solar cell structure with an efficiency of 8.0%. These results demonstrate the advantages of the multi-layer graded-bandgap device architecture over the conventional 2-layer structure. In addition, they demonstrate the effective application of the two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors with the elimination of the reference electrode as a possible impurity source.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.3390/en8054416
    Page Range: 4416-4435
    Depositing User: Margaret Boot
    Date Deposited: 22 Jul 2016 10:13
    Last Modified: 08 Jul 2019 19:16
    URI: http://shura.shu.ac.uk/id/eprint/12739

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