Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells

DHARMADASA, I. M., SAMANTILLEKE, A. P., YOUNG, J., BOYLE, M. H., BACEWICZ, R. and WOLSKA, A. (1999). Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells. Journal of Materials Science: Materials in Electronics, 10 (5-6), 441-445.

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Link to published version:: 10.1023/A:1008922229057

Abstract

Zinc selenide layers have been grown on glass/conducting glass substrates using a low temperature (similar to 65 degrees C) electrochemical technique, and characterized using X-ray diffractions (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and photo electrochemical cell (PEC) techniques. XRD shows that the material growth is highly preferential with (1 1 1) orientation. XPS work indicates that this material has a chemical and stoichiometric nature similar to that grown by molecular beam epitaxy. Annealing at similar to 250 degrees C for 15 min improves the crystallinity of the layers. PL studies indicate the presence of a low number of defect levels which causes radiative transitions within the energy region 0.7-1.4 eV below the conduction band, in the case of electrodeposited ZnSe when compared to MBE grown ZnSe. Optical properties of the thin films were characterized using a PEC cell arrangement and both n- and p-doping of the materials has been achieved successfully using Ga and As, respectively. The use of crystalline ZnSe layers in both simple p-n junctions and multi-layer solar cell structures shows encouraging results.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1023/A:1008922229057
Depositing User: Ann Betterton
Date Deposited: 08 Mar 2010 15:43
Last Modified: 24 Sep 2010 14:51
URI: http://shura.shu.ac.uk/id/eprint/1271

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