Application of glow discharge optical emission spectroscopy to study semiconductors and semiconductor devices

DHARMADASA, I, IVES, M., BROOKS, J. S., FRANCE, G. H. and BROWN, S. J. (1995). Application of glow discharge optical emission spectroscopy to study semiconductors and semiconductor devices. Semiconductor Science and Technology, 10 (3), 369-372.

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Link to published version:: https://doi.org/10.1088/0268-1242/10/3/023
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    Abstract

    This letter introduces glow discharge optical emission spectroscopy for the study of semiconductors and semiconductor devices. It has been demonstrated that, by analysing simple Si-based devices, this technique is suitable for detecting impurity trace elements down to parts per million levels. It has also been shown that this is a fast and economical technique for depth profiling of semiconductor materials and device structures. The major advantages of this method are the low cost, speed and simplicity of analysis.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1088/0268-1242/10/3/023
    Page Range: 369-372
    Depositing User: Ann Betterton
    Date Deposited: 08 Mar 2010 14:48
    Last Modified: 15 Oct 2018 09:15
    URI: http://shura.shu.ac.uk/id/eprint/1268

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