DHARMADASA, I, IVES, M., BROOKS, J. S., FRANCE, G. H. and BROWN, S. J. (1995). Application of glow discharge optical emission spectroscopy to study semiconductors and semiconductor devices. Semiconductor Science and Technology, 10 (3), 369-372.
Abstract
This letter introduces glow discharge optical emission spectroscopy for the study of semiconductors and semiconductor devices. It has been demonstrated that, by analysing simple Si-based devices, this technique is suitable for detecting impurity trace elements down to parts per million levels. It has also been shown that this is a fast and economical technique for depth profiling of semiconductor materials and device structures. The major advantages of this method are the low cost, speed and simplicity of analysis.
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