Strengths and advantages of electrodeposition as a semiconductor growth technique for applications in macroelectronic devices

DHARMADASA, I and HAIGH, J. (2006). Strengths and advantages of electrodeposition as a semiconductor growth technique for applications in macroelectronic devices. Journal of The Electrochemical Society (JES), 153 (1), G47-G52.

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Link to published version:: https://doi.org/10.1149/1.2128120
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    Abstract

    This paper reviews the strengths and advantages of electrodeposition as a low-cost and large-area semiconductor growth technique for applications in macroelectronic devices such as solar panels and large-area display devices. To highlight its strengths, experimental evidence obtained from X-ray diffracton and photoluminescence is presented. It has been shown that when materials are grown with the right conditions, electrodeposition is capable of producing high-quality materials for electronic device applications. The paper also summarizes the new science and new solar cell designs emanating from the research on electrodeposited electronic materials and solar cell devices. The new designs have been tested with well-researched III-V materials, GaAs and AlxGa((1-x))As, and the device performances show a drastic improvement in device parameters (V-oc approximate to 1110 mV and FF approximate to 0.83). These new designs have also been tested using electrodeposited CuInGaSe2 materials, with encouraging preliminary results which are also presented and discussed. (c) 2005 The Electrochemical Society.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1149/1.2128120
    Page Range: G47-G52
    Depositing User: Ann Betterton
    Date Deposited: 08 Mar 2010 17:23
    Last Modified: 11 Jan 2017 10:15
    URI: http://shura.shu.ac.uk/id/eprint/1267

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