Reply to Comment on 'New ways of developing glass conducting glass CdS/CdTe metal thin-film solar cells based on a new model', by Dharmadasa et al 2002 Semicond. Sci. Technol 17 1238-48

DHARMADASA, I, CHAURE, N. B., YOUNG, J., SAMANTILLEKE, A. P. and DELSOL, T. (2003). Reply to Comment on 'New ways of developing glass conducting glass CdS/CdTe metal thin-film solar cells based on a new model', by Dharmadasa et al 2002 Semicond. Sci. Technol 17 1238-48. Semiconductor Science and Technology, 18 (8), 813-816.

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Link to published version:: https://doi.org/10.1088/0268-1242/18/8/402
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    Abstract

    A high short-circuit current density of 69.1 mA cm(-2) for silicon solar cells was first published over a decade ago. A few photovoltaic research groups dismissed that report indicating errors must have been made in measurement. Our work on both CdTe and CIGS based tandem solar cells has also shown similar high current densities and provides one possible explanation for the observations on silicon solar cells. This paper identifies the urgent need for theoretical calculations for multilayer graded bandgap tandem solar cells.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1088/0268-1242/18/8/402
    Page Range: 813-816
    Depositing User: Ann Betterton
    Date Deposited: 08 Mar 2010 17:17
    Last Modified: 11 Jan 2017 10:22
    URI: http://shura.shu.ac.uk/id/eprint/1266

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