Chemical etching of Cu(In,Ga)Se-2 layers for fabrication of electronic devices

DELSOL, T., SIMMONDS, M. C. and DHARMADASA, I (2003). Chemical etching of Cu(In,Ga)Se-2 layers for fabrication of electronic devices. Solar energy materials and solar cells, 77 (4), 331-339.

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Link to published version:: https://doi.org/10.1016/S0927-0248(02)00352-5
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    Abstract

    Cu(In,Ga)Se-2 thin films have been grown by electrodeposition. The layers, having thicknesses of a few micrometers, have been exposed to various commonly used wet chemical etchants. The effect on surface composition and chemistry has been studied using X-ray photoelectron spectroscopy. The results indicate that the choice of etchant has a dramatic influence on both surface composition and chemistry. These etchants can result in strong selective dissolution of one of the constituent elements to such an extent that the element can be almost entirely removed from the surface layer. The possible effects on electronic device performance are discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1016/S0927-0248(02)00352-5
    Page Range: 331-339
    Depositing User: Ann Betterton
    Date Deposited: 08 Mar 2010 14:42
    Last Modified: 12 Oct 2018 13:10
    URI: http://shura.shu.ac.uk/id/eprint/1252

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