Electrodeposition and characterisation of CuInSe2 for applications in thin film solar cells

DE SILVA, K. T. L., PRIYANTHA, W. A. A., JAYANETTI, J. K. D. S., CHITHRANI, B. D., SIRIPALA, W., BLAKE, K. and DHARMADASA, I. M. (2001). Electrodeposition and characterisation of CuInSe2 for applications in thin film solar cells. Thin Solid Films, 382 (1-2), 158-163.

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Link to published version:: 10.1016/S0040-6090(00)01185-8

Abstract

Copper indium diselenide (CuInSe2) layers have been grown at room temperature by electrochemical deposition technique in an aqueous medium. Resulting thin films have been characterised using XRD, XRF, XPS, GDOES and SEM for structural, stoichiometric and morphological properties. A considerable influence of the deposition potential on the atomic composition of In and Se present in the film was observed. Cu composition remains the same within the deposition potentials used in this investigation. The deposited layers are polycrystalline and annealing at 350 degreesC for 30 min improves the crystallinity. The film quality deteriorates due to dissociation when annealed at temperatures above 350 degreesC. Excessive annealing results in a surface which is depleted in Cu and rich in In and Se. (C) 2001 Elsevier Science B.V. All rights reserved.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1016/S0040-6090(00)01185-8
Depositing User: Ann Betterton
Date Deposited: 08 Mar 2010 15:45
Last Modified: 08 Jun 2010 10:13
URI: http://shura.shu.ac.uk/id/eprint/1250

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