Schottky barrier formation at metal/n-ZnSe interfaces and characterization of Au/n-ZnSe by ballistic electron emission microscopy

CORATGER, R., GIRARDIN, C., BEAUVILLAIN, J., DHARMADASA, I. M., SAMANTHILAKE, A. P., FROST, J. E. F., PRIOR, K. A. and CAVENETT, B. C. (1997). Schottky barrier formation at metal/n-ZnSe interfaces and characterization of Au/n-ZnSe by ballistic electron emission microscopy. Journal of Applied Physics, 81 (12), 7870-7875.

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Link to published version:: 10.1063/1.365395

Abstract

Current transport and ballistic electron emission microscopy (BEEM) studies have been carried out on metal contacts fabricated on chemically etched n-ZnSe epitaxial layers grown by molecular beam epitaxy. The contact materials Ag, Sb, Au, Ge/Au, Sn, Ni, and Pd form one or more barrier heights out of the following seven discrete values: 0.90, 1.20, 1.32, 1.50, 1.67, 1.80, and 2.10+/-0.04 eV observed to date. BEEM work carried out on Au/n-ZnSe systems has identified four levels 1.32 [Morgan et al., J. Appl. Phys. 79, 1532 (1996)], 1.50, 1.67 [Coratger et al., Phys. Rev. B 15, 2357 (1995)] and 1.80 eV to date, confirming Fermi-level pinning at different positions. Schottky barrier formation at metal/n-ZnSe systems cannot be explained by the simple Schottky model. The strong Fermi-level pinning observed could be due to bulk and/or surface defects of the ZnSe material. (C) 1997 American Institute of Physics.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1063/1.365395
Depositing User: Ann Betterton
Date Deposited: 08 Mar 2010 17:20
Last Modified: 08 Mar 2010 17:20
URI: http://shura.shu.ac.uk/id/eprint/1249

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