Electrodeposition of p-i-n type CuInSe2 multilayers for photovoltaic applications

CHAURE, N. B., YOUNG, J., SAMANTILLEKE, A. P. and DHARMADASA, I (2004). Electrodeposition of p-i-n type CuInSe2 multilayers for photovoltaic applications. Solar energy materials and solar cells, 81 (1), 125-133.

Full text not available from this repository.
Related URLs:

    Abstract

    Copper indium diselenide polycrystalline thin films of p-, i- and n-type electrical conductivity were grown using a one-step electrodeposition process in a single bath. The bulk structure and the stoichiometry of the layers were determined using X-ray diffraction and X-ray fluorescence. The material composition was correlated with the electrical conductivity type variation, detected by the photoelectrochemical cell. Atomic force microscopy analysis showed copper-rich films deposited at low cathodic potentials (0.6 V vs Ag/AgCl) are of spherical and granular morphology and the grain sizes were 0.3-0.5 mum, while stoichiometric CIS films deposited at 1.0 V vs Ag/AgCl have grain sizes of 0.1-0.4 mum. The initial studies of optoelectronic properties (V-oc J(sc) and FF) of the four-layer solar cell devices (glass/FTO/n-CdS/n-CIS/i-CIS/p-CIS/Au) are presented. (C) 2003 Elsevier B.V. All rights reserved.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: 1016/j.solmat.2003.10.001
    Page Range: 125-133
    Depositing User: Ann Betterton
    Date Deposited: 08 Mar 2010 16:11
    Last Modified: 12 Oct 2018 12:37
    URI: http://shura.shu.ac.uk/id/eprint/1247

    Actions (login required)

    View Item View Item

    Downloads

    Downloads per month over past year

    View more statistics