Electrodeposition of p-i-n type CuInSe2 multilayers for photovoltaic applications

CHAURE, N. B., YOUNG, J., SAMANTILLEKE, A. P. and DHARMADASA, I. M. (2004). Electrodeposition of p-i-n type CuInSe2 multilayers for photovoltaic applications. Solar energy materials and solar cells, 81 (1), 125-133.

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Abstract

Copper indium diselenide polycrystalline thin films of p-, i- and n-type electrical conductivity were grown using a one-step electrodeposition process in a single bath. The bulk structure and the stoichiometry of the layers were determined using X-ray diffraction and X-ray fluorescence. The material composition was correlated with the electrical conductivity type variation, detected by the photoelectrochemical cell. Atomic force microscopy analysis showed copper-rich films deposited at low cathodic potentials (0.6 V vs Ag/AgCl) are of spherical and granular morphology and the grain sizes were 0.3-0.5 mum, while stoichiometric CIS films deposited at 1.0 V vs Ag/AgCl have grain sizes of 0.1-0.4 mum. The initial studies of optoelectronic properties (V-oc J(sc) and FF) of the four-layer solar cell devices (glass/FTO/n-CdS/n-CIS/i-CIS/p-CIS/Au) are presented. (C) 2003 Elsevier B.V. All rights reserved.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 1016/j.solmat.2003.10.001
Depositing User: Ann Betterton
Date Deposited: 08 Mar 2010 16:11
Last Modified: 08 Mar 2010 16:11
URI: http://shura.shu.ac.uk/id/eprint/1247

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