Electrodeposition of p(+), p, i, n and n(+)-type copper indium gallium diselenide for development of multilayer thin film solar cells

CHAURE, N. B., SAMANTILLEKE, A. P., BURTON, R. P., YOUNG, J. and DHARMADASA, I. M. (2005). Electrodeposition of p(+), p, i, n and n(+)-type copper indium gallium diselenide for development of multilayer thin film solar cells. Thin Solid Films, 472 (1-2), 212-216.

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Link to published version:: 10.1016/j.tsf.2004.07.051

Abstract

Copper indium gallium diselenide (CuInGaSe2) layers with p(+), p, i, n, and n(+)-type electrical conduction, as pre-determined, have been electrodeposited from aqueous solutions in the same bath. The photoelectrochemical cell (PEC) has been used as the key analytical tool to determine the electrical conduction type, and the corresponding stoichiometry of the layers was determined using X-ray fluorescence (XRF). A four-layer n-n-i-p solar cell structure was fabricated and a corresponding energy band diagram for the device was constructed. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were carried out to assess the devices and these indicate encouraging characteristics enabling further development of multilayer thin film solar cells based on CuInGaSe2. (C) 2004 Elsevier B.V. All rights reserved.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1016/j.tsf.2004.07.051
Depositing User: Ann Betterton
Date Deposited: 08 Mar 2010 16:09
Last Modified: 08 Mar 2010 16:09
URI: http://shura.shu.ac.uk/id/eprint/1245

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