Ballistic electron emission microscopy of Au/n-ZnSe contacts and local density of states spectroscopy

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CHAHBOUN, A., CORATGER, R., AJUSTRON, F., BEAUVILLAIN, J., DHARMADASA, I and SAMANTILLEKE, A. P. (2000). Ballistic electron emission microscopy of Au/n-ZnSe contacts and local density of states spectroscopy. Journal of Applied Physics, 87 (5), 2422-2426.

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Abstract

Ballistic electron emission microscopy (BEEM) has been used to investigate the Au/n-ZnSe contact at high voltage. A statistical barrier height value of 1.63 +/- 0.05 eV is obtained. The metal-insulator-semiconductor structure is invoked to explain domains of low electron transmission. Features appear in BEEM spectra at higher voltages and can be attributed to the density of empty states in the semiconductor. Impact ionization effects are observed when the electron kinetic energy exceeds the band-gap energy. (C) 2000 American Institute of Physics. [S0021-8979(00)02104-6].

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Research Institute, Centre or Group - Does NOT include content added after October 2018:

Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group

Page Range:

2422-2426

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ORCID:

https://orcid.org/0000-0001-7988-669X