Photoemission study of the formation of intimate In-InGaAs(100) contacts at room and cryogenic temperatures

CAMMACK, D. S., MCGREGOR, S. M., MCCHESNEY, J. J., DHARMADASA, I, CLARK, S. A., DUNSTAN, P. R., BURGESS, S. R., WILKS, S. P. and ELIOTT, M. (1997). Photoemission study of the formation of intimate In-InGaAs(100) contacts at room and cryogenic temperatures. Journal of Applied Physics, 81 (12), 7876-7879.

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Link to published version:: https://doi.org/10.1063/1.365377
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    Abstract

    Previous current-voltage studies of In contacts deposited on atomically clean (intimate) In53Ga47As(100) have indicated the potential to ''select'' barrier heights in this materials system by cryogenic processing. Soft x-ray photoemission spectroscopy was used to determine the electronic and chemical nature of these interfaces, as a function of formation temperature. Metallization at room temperature results in a predominantly three-dimensional mode of growth, accompanied by the outdiffusion of As. Low temperature metallization appears to reduce clustering and inhibit As outdiffusion. It is proposed that the distribution of surface states and the fermi level pinning position are altered by the changes that occur in the geometry and bonding of the interface at low temperature. (C) 1997 American Institute of Physics.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1063/1.365377
    Page Range: 7876-7879
    Depositing User: Ann Betterton
    Date Deposited: 08 Mar 2010 17:08
    Last Modified: 15 Oct 2018 09:01
    URI: http://shura.shu.ac.uk/id/eprint/1242

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