BLOMFIELD, C. J., DHARMADASA, I. M., PRIOR, K. A. and CAVENETT, B. C. (1996). Discrete Schottky barriers observed for the metal/n-ZnSe(100) system. Journal of Crystal Growth, 159 (1-4), 727-731.Full text not available from this repository.
We report on the formation of discrete Schottky barriers for Au, Ag and Sb contacts to chemically etched n-ZnSe/n(+)GaAs(100). For Au/n-ZnSe phi(b) = 0.9, 1.2, 1.45 and 1.65 +/- 0.04 eV, for Ag/n-ZnSe phi(b) = 1.2 and 1.45 +/- 0.04 eV and for Sb/n-ZnSe phi(b) = 1.45, 1.65, 1.8 and 2.1 +/- 0.04 eV were repeatedly observed. Often the barrier height was seen to vary from contact to contact on the same sample. The barrier heights appear to be independent of the metal used but correlated well with reported deep levels. These findings combined with the ageing properties of Au/n-ZnSe(100) devices in particular leads us to the conclusion that Fermi level pinning by native defects is a dominant mechanism in Schottky barrier formation in these systems.
|Additional Information:||7th International Conference on II-VI Compounds and Devices AUG 13-18, 1995, EDINBURGH, SCOTLAND|
|Research Institute, Centre or Group:||Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group|
|Depositing User:||Ann Betterton|
|Date Deposited:||08 Mar 2010 15:14|
|Last Modified:||08 Mar 2010 15:14|
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