Discrete Schottky barriers observed for the metal/n-ZnSe(100) system

BLOMFIELD, C. J., DHARMADASA, I. M., PRIOR, K. A. and CAVENETT, B. C. (1996). Discrete Schottky barriers observed for the metal/n-ZnSe(100) system. Journal of Crystal Growth, 159 (1-4), 727-731.

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Link to published version:: 10.1016/0022-0248(95)00648-6

Abstract

We report on the formation of discrete Schottky barriers for Au, Ag and Sb contacts to chemically etched n-ZnSe/n(+)GaAs(100). For Au/n-ZnSe phi(b) = 0.9, 1.2, 1.45 and 1.65 +/- 0.04 eV, for Ag/n-ZnSe phi(b) = 1.2 and 1.45 +/- 0.04 eV and for Sb/n-ZnSe phi(b) = 1.45, 1.65, 1.8 and 2.1 +/- 0.04 eV were repeatedly observed. Often the barrier height was seen to vary from contact to contact on the same sample. The barrier heights appear to be independent of the metal used but correlated well with reported deep levels. These findings combined with the ageing properties of Au/n-ZnSe(100) devices in particular leads us to the conclusion that Fermi level pinning by native defects is a dominant mechanism in Schottky barrier formation in these systems.

Item Type: Article
Additional Information: 7th International Conference on II-VI Compounds and Devices AUG 13-18, 1995, EDINBURGH, SCOTLAND
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1016/0022-0248(95)00648-6
Depositing User: Ann Betterton
Date Deposited: 08 Mar 2010 15:14
Last Modified: 08 Mar 2010 15:14
URI: http://shura.shu.ac.uk/id/eprint/1241

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