Discrete Schottky barriers observed for the metal/n-ZnSe(100) system

BLOMFIELD, C. J., DHARMADASA, I, PRIOR, K. A. and CAVENETT, B. C. (1996). Discrete Schottky barriers observed for the metal/n-ZnSe(100) system. Journal of Crystal Growth, 159 (1-4), 727-731.

Full text not available from this repository.
Link to published version:: https://doi.org/10.1016/0022-0248(95)00648-6
Related URLs:

    Abstract

    We report on the formation of discrete Schottky barriers for Au, Ag and Sb contacts to chemically etched n-ZnSe/n(+)GaAs(100). For Au/n-ZnSe phi(b) = 0.9, 1.2, 1.45 and 1.65 +/- 0.04 eV, for Ag/n-ZnSe phi(b) = 1.2 and 1.45 +/- 0.04 eV and for Sb/n-ZnSe phi(b) = 1.45, 1.65, 1.8 and 2.1 +/- 0.04 eV were repeatedly observed. Often the barrier height was seen to vary from contact to contact on the same sample. The barrier heights appear to be independent of the metal used but correlated well with reported deep levels. These findings combined with the ageing properties of Au/n-ZnSe(100) devices in particular leads us to the conclusion that Fermi level pinning by native defects is a dominant mechanism in Schottky barrier formation in these systems.

    Item Type: Article
    Additional Information: 7th International Conference on II-VI Compounds and Devices AUG 13-18, 1995, EDINBURGH, SCOTLAND
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1016/0022-0248(95)00648-6
    Page Range: 727-731
    Depositing User: Ann Betterton
    Date Deposited: 08 Mar 2010 15:14
    Last Modified: 15 Oct 2018 09:06
    URI: http://shura.shu.ac.uk/id/eprint/1241

    Actions (login required)

    View Item View Item

    Downloads

    Downloads per month over past year

    View more statistics