Items where SHU Author is "Evans-Freeman, Jan"
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Number of items: 12.
NABOK, A. V., DAVIS, F., HASSAN, A. K., HIGSON, S. P. J. and EVANS-FREEMAN, J. H. (2008). Optical and AFM study of electrostatically assembled films of CdS and ZnS colloid nanoparticles. Applied Surface Science, 254 (15), 4891-4898.
VERNON-PARRY, K. D., EVANS-FREEMAN, J. H. and DAWSON, P. (2008). The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells. Materials Science and Engineering B, 146 (1-3), 231-235.
HASHIM, A. A. , EVANS-FREEMAN, J., HASSAN, A. K. and MOHAMMAD, M. T. (2007). Dipole potential barrier simulation model for studying polar polymers. Materials science and engineering b-solid state materials for advanced technology, 138 (2), 161-165.
HASHIM, A. A., BARRATT, D. S., HASSAN, A. K., EVANS-FREEMAN, J. H. and NABOK, A. (2006). Resistivity network and structural model of the oxide cathode for CRT application. Journal of display technology, 2 (2), 186-93.
EVANS-FREEMAN, J. H., EMIROGLU, D., GAD, M. A., MITROMARA, N. and VERNON-PARRY, K. D. (2006). Deep electronic states in ion-implanted Si. Journal of materials science.
EVANS-FREEMAN, J. H. and VERNON-PARRY, K. (2005). Optical and electrical activity of defects in rare earth implanted Si. Optical materials.
EVANS-FREEMAN, J. H., EMIROGLU, D., VERNON-PARRY, K., MURPHY, J. D. and WILSHAW, P. R. (2005). High resolution deep level transient spectroscopy applied to extended defects in silicon. Journal of physics. Condensed matter, 17 (22).
ABDELGADER, N. and EVANS-FREEMAN, J. H. (2003). High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon. Physical review E, 67 (6), 061703.
GAD, M. and EVANS-FREEMAN, J. H. (2002). High resolution minority carrier transient spectroscopy of Si/SiGe/Si quantum wells. Journal of applied physics, 92 (9), 5252-5258.
EVANS-FREEMAN, J. H., ABDELGADER, N. and KAN, P. Y. Y. (2002). High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon. Journal of applied physics, 92 (7), 3755-3760.
VERNON-PARRY, K. D., EVANS-FREEMAN, J., HAWKINS, I. D., DAWSON, P. and PEAKER, A. R. (2001). Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon. Journal of applied physics, 89 (5), 2715-2719.
Conference or Workshop Item
VERNON-PARRY, K. D., EVANS-FREEMAN, J. H., MITROMARA, N. and MAY, P. W. (2008). High Resolution Deep Level Transient Spectroscopy of p-n diodes formed from p-type polycrystalline diamond on n-type silicon. In: Conference on Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, Jul 28-Sep 01, 2008.