Items where SHU Author is "Vernon-Parry, Karen"
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Number of items: 18.
POWER, Sam, NORTCLIFFE, Anne, VERNON-PARRY, Karen and SCHENKEL, Torsten (2016). Engineering learning through aerospace engineering. Other. Athens Institute for Education and Research.
GOODWIN-JONES, J, NORTCLIFFE, Anne and VERNON-PARRY, Karen (2016). What does good engineering laboratory pedagogy look like? In: Engineering education on top of the world : industry university cooperation : 44 th SEFI Conference Proceedings. SEFI.
AYOMANOR, B.O. and VERNON-PARRY, Karen (2016). Potential Synthesis of Solar-Grade Silicon from Rice Husk Ash. In: PICHLER, P, (ed.) Gettering and Defect Engineering in Semiconductor Technology XVI. Solid State Phenomena (242). Trans Tech Publications, 41-47.
ELSHERIF, O.S., VERNON-PARRY, Karen, DHARMADASA, I, EVANS-FREEMAN, J.H., AIREY, R.J., KAPPERS, M.J. and HUMPHREYS, C.J. (2012). Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films, 520 (7), 3064-3070.
ELSHERIF, O S, VERNON-PARRY, Karen, EVANS-FREEMAN, J H and MAY, P W (2012). Effect of doping on electronic states in B-doped polycrystalline CVD diamond films. Semiconductor Science and Technology, 27 (6), 065019.
ELSHERIF, Osama S., VERNON-PARRY, Karen, EVANS-FREEMAN, Jan H. and MAY, Paul W. (2012). Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films. Materials Science Forum, 717-20, 1315-1318.
ELSHERIF, O., VERNON-PARRY, Karen, EVANS-FREEMAN, J.H., AIREY, R.J., KAPPERS, M. and HUMPHREYS, C.J. (2011). Characterisation of defects in p-GaN by admittance spectroscopy. Physica B: Condensed Matter, 407 (15), 2960-2963.
LEACH, Colin, VERNON-PARRY, Karen D. and ALI, Naheed K. (2010). Deep level transient spectroscopy study of the effect of Mn and Bi doping on trap formation in ZnO. Journal of Electroceramics, 25 (2-4), p. 188.
FORDER, Sue and VERNON-PARRY, Karen (2010). Enhancing learner development through the use of blogs. In: ANAGNOSTOPOULOU, Kyriaki and PARMAR, Deeba, (eds.) Supporting the first year student experience through the use of learning technologies. Middlesex University, 42-43.
FORDER, Sue, MALONE, Cathy and VERNON-PARRY, Karen (2010). To support student learning by embedding writing skills. In: BRAMHALL, Mike, O'LEARY, Christine and CORKER, Chris, (eds.) CPLA Case Studies. Vol.2. Centre for Promoting Learner Autonomy, Sheffield Hallam University, 77-88.
VERNON-PARRY, K. D., EVANS-FREEMAN, J. H., MITROMARA, N. and MAY, P. W. (2008). High Resolution Deep Level Transient Spectroscopy of p-n diodes formed from p-type polycrystalline diamond on n-type silicon. In: Conference on Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, Jul 28-Sep 01, 2008.
VERNON-PARRY, K. D., EVANS-FREEMAN, J. H. and DAWSON, P. (2008). The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells. Materials Science and Engineering B, 146 (1-3), 231-235.
EVANS-FREEMAN, J. H., EMIROGLU, D., GAD, M. A., MITROMARA, N. and VERNON-PARRY, K. D. (2006). Deep electronic states in ion-implanted Si. Journal of materials science.
LEACH, C. and VERNON-PARRY, K. D. (2006). The effect of sintering temperature on the development of grain boundary traps in zinc oxide based varistors. Journal of Materials Science, 41 (12), 3815-3819.
EVANS-FREEMAN, J. H. and VERNON-PARRY, K. (2005). Optical and electrical activity of defects in rare earth implanted Si. Optical materials.
EVANS-FREEMAN, J. H., EMIROGLU, D., VERNON-PARRY, K., MURPHY, J. D. and WILSHAW, P. R. (2005). High resolution deep level transient spectroscopy applied to extended defects in silicon. Journal of physics. Condensed matter, 17 (22).
VERNON-PARRY, K. D., DAVIES, G. and GALLOWAY, S. (2004). Electronic and structural properties of grain boundaries in electron-irradiated edge-defined film-fed growth silicon. Semiconductor science and technology.
VERNON-PARRY, K. D., EVANS-FREEMAN, J., HAWKINS, I. D., DAWSON, P. and PEAKER, A. R. (2001). Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon. Journal of applied physics, 89 (5), 2715-2719.