Mid infrared luminescence of dilute nitride semiconductors : microscopic approach vs experiments

ORIAKU, C.I. and PEREIRA, Mauro (2014). Mid infrared luminescence of dilute nitride semiconductors : microscopic approach vs experiments. In: RAZEGHI, Manijeh, BARANOV, Alexei N., ZAVADA, John M. and PAVLIDIS, Dimitris, (eds.) Terahertz Emitters, Receivers, and Applications V. Proceedings SPIE (9199). SPIE - International Society for Optical Engineering, p. 919910.

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Official URL: http://dx.doi.org/10.1117/12.2062018
Link to published version:: https://doi.org/10.1117/12.2062018

Abstract

In this paper, analytical expressions for optical nonlinearities are applied in the simulations of the absorption and photoluminescence of mid infrared materials. The fast and efficient approximations reproduce recent experimental data for dilute nitride semiconductors with very good agreement.

Item Type: Book Section
Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Identification Number: https://doi.org/10.1117/12.2062018
Page Range: p. 919910
Depositing User: Hilary Ridgway
Date Deposited: 04 Mar 2015 10:31
Last Modified: 18 Mar 2021 09:00
URI: https://shura.shu.ac.uk/id/eprint/9512

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