Effect of phosphorous inoculation on creep behavior of a hypereutectic Al-Si alloy

FARAJI, Masoumeh and KHALILPOUR, Hamid (2014). Effect of phosphorous inoculation on creep behavior of a hypereutectic Al-Si alloy. Journal of Materials Engineering and Performance, 23 (10), 3467-3473.

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Abstract

Creep behavior of Al-Si hypereutectic alloys inoculated with phosphorus was investigated using the impression creep testing. The results showed that at stress regimes of up to 400-450 MPa and temperatures up to 300 A degrees C, no significant creep deformation occurred in both uninoculated and inoculated specimens; however, at temperatures above 300 A degrees C, the inoculated alloys presented better creep properties. Creep data were used to calculate the stress exponent of steady-state creep rate, n, and creep activation energy, Q, for different additive conditions where n was found varied between 5 and 8. Owing to the fact that most alloys have lower values for n (4, 5), threshold stress was estimated for studied conditions. The creep governing mechanisms for different conditions are discussed here, with a particular attention to the effect of phosphorous addition on the microstructural features, including number of primary silicon particles, mean primary silicon spacing, and morphology and distribution of eutectic silicon.

Item Type:	Article
Research Institute, Centre or Group - Does NOT include content added after October 2018:	Materials and Engineering Research Institute > Materials Analysis and Research Services
Identification Number:	https://doi.org/10.1007/s11665-014-1152-z
Page Range:	3467-3473
Depositing User:	Ann Betterton
Date Deposited:	05 Dec 2014 16:25
Last Modified:	18 Mar 2021 10:45
URI:	https://shura.shu.ac.uk/id/eprint/8937

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