FAR INFRARED LASERS WITHOUT INVERSION BASED ON INTERSUBBAND TRANSITIONS IN SEMICONDUCTORS

PEREIRA, M. F. (2009). FAR INFRARED LASERS WITHOUT INVERSION BASED ON INTERSUBBAND TRANSITIONS IN SEMICONDUCTORS. In: International Conference on Physics, Chemistry and Application of Nanostructures, Minsk, RUSSIA, MAY 26-29, 2009. 565-569.

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Abstract

This paper summarizes recent developments in the search for materials and designs that can lead to lasing without global population inversion in the far infrared based on intersubband devices. The recent proposal of using the strong k-dependence of the transverse electric dipole moment to filter local inversion of nonequilibrium holes in the valence subbands of III-V quantum wells is discussed.

Item Type:	Conference or Workshop Item (Paper)
Additional Information:	Times Cited: 0 Borisenko, VE Gaponenko, SV Gurin, VS International Conference on Physics, Chemistry and Application of Nanostructures MAY 26-29, 2009 Minsk, RUSSIA
Research Institute, Centre or Group - Does NOT include content added after October 2018:	Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Page Range:	565-569
Depositing User:	Danny Weston
Date Deposited:	15 Apr 2010 15:15
Last Modified:	18 Mar 2021 08:45
URI:	https://shura.shu.ac.uk/id/eprint/1695

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