CdS nanoparticles embedded in metal-insulator-semiconductor structures

MALIK, S., RAY, A. K., HASSAN, A. K. and NABOK, A. V. (2002). CdS nanoparticles embedded in metal-insulator-semiconductor structures. In: 2nd IEEE Conference on Nanotechnology, Washington, D.C., Aug 26-28, 2002.

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    Abstract

    Metal-Insulator-Semiconductor structures were fabricated using 40 layers thick Langmuir-Blodgett (LB) films of stearic acid (SA) on hydrophobic n-type silicon (n-Si) substrates. Samples containing cadmium sulphide (CdS) nanoparticles exhibit higher rectification than untreated ones by two orders of magnitudes. The flat band voltage Is found to be 0.5V from the capacitance measurement. The effective dielectric constant of the CdS embedded SA matrix is estimated to be 5.2.

    Item Type: Conference or Workshop Item (Paper)
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Depositing User: Ann Betterton
    Date Deposited: 20 Apr 2010 15:45
    Last Modified: 29 Oct 2018 12:26
    URI: http://shura.shu.ac.uk/id/eprint/1412

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