Influence of chemical etching on metal contacts to II-VI compounds: CdTe and ZnSe

DHARMADASA, I. M., BLOMFIELD, C. J., GREGORY, G. E. and YOUNG, J. (1994). Influence of chemical etching on metal contacts to II-VI compounds: CdTe and ZnSe. International journal of electronics, 76 (5), 961-967.

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Link to published version:: 10.1080/00207219408926005

Abstract

The chemical nature of CdTe and ZnSe surfaces prepared by various chemical treatments has been studied by X-ray photoelectron spectroscopy. It has been found that the stoichiometry of the surfaces is very sensitive to the chemical treatments and each surface shows a similar pattern. In general bromine-containing or acid-based solutions preferentially remove the semiconductor cation, leaving a semiconductor anion-rich surface. In contrast, alkaline-based systems preferentially remove the semiconductor anion to produce a semiconductor cation-rich surface. Metal contacts fabricated on these surfaces show considerable differences in current-transport properties. The stability of these metal-semiconductor contacts has also been investigated and the microscopic interactions at these interfaces studied with Auger depth profiling and secondary-ion mass spectroscopy surface imaging techniques. The influence of microscopic interactions on the macroscopic electrical properties is presented and discussed in detail.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1080/00207219408926005
Depositing User: Ann Betterton
Date Deposited: 08 Mar 2010 16:35
Last Modified: 13 Sep 2010 14:42
URI: http://shura.shu.ac.uk/id/eprint/1260

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